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| ILH100 HERMETIC PHOTOTRANSISTOR OPTOCOUPLER FEATURES * Operating Temperature Range, -55C to +125C * Current Transfer Ratio Guaranteed from -55C to +100C Ambient Temperature Range * High Current Transfer Ratio at Low Input Current * Isolation Test Voltage, 3000 VDC * Base Lead Available for Transistor Biasing * Standard 8 Pin DIP Package DESCRIPTION The ILH100 is designed especially for hi-rel applications requiring optical isolation with high current transfer ratio and low saturation VCE. Each optocoupler consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in an 8 pin hermetically sealed DIP package. The ILH100's low input current makes it well suited for direct CMOS to LSTTL/TTL interfaces. Dimensions in inches (mm) .390.005 (9.91.13) 8 7 6 5 .320 (8.13) max. 4 .150 (3.81) max. .300 (7.62) typ. Siemens XXX XXXX XXYY .020 (.51) min. 1 2 3 .010.002 (.25.05) 2 7 Base 6 Anode .018.002 (.46.05) .100 .010 (2.54.25) .125 (3.18) min. Cathode Collector 3 5 Emitter Maximum Ratings Emitter Reverse Voltage ................................................................................6.0 V Forward Current ..............................................................................60 mA Peak Forward Current(1) ...................................................................... 1 A Power Dissipation.........................................................................150 mW Derate Linearly from 25C ........................................................1.5 mW/C Detector Collector-Emitter Voltage ...................................................................70 V Emitter-Base Voltage ...........................................................................7 V Collector-Base Voltage .....................................................................70 V Continuous Collector Current ..........................................................50 mA Power Dissipation.........................................................................300 mW Derate Linearly from 25C ........................................................3.0 mW/C Package Input-Output Isolation Test Voltage(2) ..................................... 3000 VDC Storage Temperature Range ..........................................-65C to +150C Operating Temperature Range..........................................-55 to +125C Junction Temperature...................................................................... 150C Soldering Time at 240C, 1.6 mm from case ................................ 10 sec. Power Dissipation.........................................................................350 mW Derate Linearly from 25C ........................................................3.5 mW/C Notes: 1. Values applies for PW1 ms, PRR300 pps. 2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. TA=25C and duration=1 second, RH=45%. 5-1 Characteristics (T=25C, unless otherwise specified) Parameter Emitter Forward Voltage Reverse Breakdown Voltage Reverse Current Capacitance Thermal Resistance Detector Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Leakage Current DC Forward Current Gain Saturated DC Forward Gain Capacitance VCE(sat) VBE ICEO HFE HFE(sat) CCE CCB CEB RTH CTR(sat) CTEce Current Transfer Ratio, Collector-Base CTRcb Isolation and Insulation Common Mode Rejection Output High Common Mode Rejection Output High Package Capacitance Insulation Resistance Leakage Current, Input-Output CMH CML CIO RIO IIO 1011 1000 1000 2000 2000 1.5 1014 10 V/s V/s pF A VCM=500 Vp-p, VCC=5 V, RL=1 K, IF=0 mA VCM=500 Vp-p, VCC=5 V, RL=1 K, IF=10 mA VIO=0 V, 1 MHz VIO=500 VDC Relative Humidity 50%, VIO 3000 VDC, 5 sec. 0.4 0.7 0.9 % IF=10 mA, VCB=9.3 V 70 100 250 125 0.25 0.65 5 400 200 6.8 8.5 11 220 210 300 250 450 50 750 325 pF pF pF C/W % % 0.4 V V nA IB=20A, ICE=1 mA IB=20A VCE=10 V VCE=10 V, IB=20A VCE=0.4 V, IB=20A VCE=5 V, f=1 MHz VF VBR IR CJ RTH 6 0.01 20 220 10 1.45 1.7 V V A pF C/W IF=60 mA IR=10 A VR=6 V VF=0 V, f=1 MHz Junction to Lead Symbol Min. Typ. Max. Unit Condition Thermal Resistance Coupled Characteristics (-55C to 100 C) Saturated Current Transfer Ratio Current Transfer Ratio, Collector-Emitter Junction to Lead IF=10 mA VCE=0.4 V IF=10 mA, VCE=10 V Typical Switching Speeds (TA=25C) Non-Saturated Switching Delay Rise Storage Fall Propagation-High to Low Propagation-Low to High Saturated Switching(1) Delay Rise Storage Fall Propagation-High to Low Propagation-Low to High td tr ts tf tpHL tpLH 0.7 1 13.5 12 1.4 15 2 3 30 30 5 40 s s s s s s VCE=0.4 V VCE=0.4 V RL=1 K IF=10 mA VCC=5 V, VTH=1.5 V RBE=open Symbol td tr ts tf tpHL tpLH Typ. 0.8 2 0.4 2 1 1.5 Max. 2 5 1.5 5 3 4 Unit s s s s s s Test Condition VCC=5 V RL=75 IF=10 mA 50% of VPP RBE=open ILH100 5-2 Figure 1. Switching time waveform and test schematic-- non-saturated test condition Input IF 0 90% VOUT tr IF tf VCC 10% Pulse Width=100 s Duty Cycle=1 % Figure 4. Normalized non-saturated current transfer ratio versus temperature and LED current 1.2 NCTRce - Normalized CTR 1.0 0.8 Normalized to: Ta = 25 C Vce = 10V, IF = 10 mA 10 mA 1 mA 0.6 0.4 0.2 -50 .5 mA 5 mA -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 VOUT 100 RL Figure 5. Normalized saturated current transfer ratio versus temperature and LED current 1.1 NCTRce - Normalized CTR Vce = 10 V 1.0 0.9 0.8 0.7 10 mA 20 mA IF - Forward Current - mA Figure 2. Forward current versus forward voltage and temperature 100 25C 125C 30 mA 0.6 60 mA 0.5 Normalized to: Ta = 25C Vce = 10V, IF = 10 mA 0.4 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 10 125 1 -55C -25C 0C 85C Figure 6. Normalized saturated current transfer ratio versus temperature and LED current NCTRce(sat) - Normalized Saturated CTR 0.8 0.7 0.6 0.5 0.4 0.5 mA 1 mA 5 mA 10 mA Vce = 0.4 V .1 0.8 1.0 1.2 1.4 1.6 1.8 VF - Forward Voltage - V Figure 3. Peak LED current versus duty factor refresh rate and temperature IF(Pk) - Peak LED Current - A 1.2 10KHz Tj(max) = 150C 1.0 0.8 0.6 0.4 0.2 0.0 0 10KHz 1KHz 100Hz 1KHz 100 Hz 0.3 Normalized to Ta =25C Vce = 10 V, IF = 10 mA 0.2 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 25C 125C Figure 7. Collector-emitter current versus temperature and LED current 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 75 100 125 Ta - Ambient Temperature - C ILH100 10 mA Vce = 0.4 V 60 mA 20 40 60 80 DF - Duty Factor - % 100 NCTR(sat)- Normalized Saturated CTR 30 mA 20 mA 60 mA Normalized to: Ta = 25C Vce = 10 V , IF = 10 mA 5-3 Figure 8. Collector-emitter current versus temperature and LED current 100 Ice - Collector Current - mA Figure 12. Normalized collector base CRT versus temperature and LED current NCTRcb - Normalized CTRcb 1.5 -55C 1.0 -25C 0C 0.5 25C 85C 125C 0.0 .1 1 Normalized to: IF = 10mA, Ta =25C Vcb = 9.3v 10 100 Vce = 10 V 10 mA 10 5 mA 1 mA 1 0.5 mA .1 -50 -25 0 25 50 75 100 125 Ta - Ambient Temperature - C IF - LED Current - mA NIcb - Normalized Photocurrent Figure 9. Collector-emitter current versus temperature and LED current 200 Figure 13. Normalizied Icb photocurrent versus temperature and LED current 10 1 .1 .01 .001 .1 1 10 IF - -LED Current - mA mA IF LED Current 100 Normalized to: If = 10 mA, Ta = 25C Vcb = 9.3V Ice - Collector Current - mA Vce = 10 V 150 60 mA 100 50 0 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 30 mA 20 mA 10 mA -55C -25C 0C 25C 85C 125C Figure 10. Saturated collector-emitter current versus temperature and LED current 100 Ice - Collector Current - mA Figure 14. Normalized non-saturated and saturated HFE at TA=25C versus base current base current HFE at Ta 25 C versus NHFE - Normalized HFE 1.5 Normalized to: Ib = 20A, Vce=10V Ta=25C 1.0 NHFE(SAT) Vce = 0.4V NHFE Vce = 10V 10 5 mA 1 mA 10 mA 20 mA 30 mA 60 mA 1 0.5 mA Vce = 0.4 V .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 0.5 0.0 1 10 100 Ib - Base Current - A 1000 Figure 11. Saturated collector-emitter current versus temperature and LED current Ice - Collector Current - mA Figure 15. Normalizied non-saturated and saturated HFE at TA=50C versus base current NHFE - Normalized HFE 100 Vce = 0.4 V 10 10 mA 5 mA 1 mA 0.5 mA .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 1.5 Normalized to: Ib = 20A, Vce=10V Ta=25C NHFE Vce = 10V 1.0 NHFE(SAT) Vce = 0.4V 1 0.5 0.0 1 10 100 Ib - Base Current - A 1000 ILH100 5-4 Figure 16. Normalized non-saturated and saturated HFE at TA=70C versus base current 1.5 NHFE - Normalized HFE Figure 20. Propagation delay versus temperatureand collector load resistance for IF=5 mA 1000 Propagation Delay - s Normalized to: Ib = 20A, Vce=10V Ta=25C NHFE Vce = 10V NHFE(SAT) Vce = 0.4V Vcc = 5.25V, Rbe = open, Vth = 1.5V 47K tpLH 1.0 100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 0.5 0.0 1 10 100 Ib - Base Current - A 1000 Figure 17. Collector-emitter leakage current versus temperature Iceo - Collector-Emitter - nA 10 10 10 5 4 3 WORST CASE Vce = 10V TYPICAL Figure 21. Propagation delay versus temperatureand collector load resistance for IF=10 mA 1000 Propagation Delay - s Vcc = 5.25V, Rbe = open, Vth = 1.5V 47K tpLH 100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Ta Ambient Temperature - C Ta - -Ambient Temperature - C Figure 18. Base emitter voltage versus base current g 1000 100 Ta = 25C 10 1 .1 .01 .001 0.4 0.5 0.6 0.7 0.8 Figure 22. Propagation delay versus temperatureand collector load resistance for IF=20 mA 1000 Propagation Delay - s Vcc = 5.25V, Rbe = open, Vth = 1.5V 47K tpLH Ib - Base Current - A 100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Vbe - Base Emitter Voltage - V Figure 19. Base emitter capacitance versus base emitter Base-emitter capacitance versus base-emitter voltage voltage Cbe -Base Emitter Capacitance - pF 10000 Figure 23. Propagation delay versus temperatureand collector load resistance for IF=5 mA 30 Propagation Delay - s 25 20 15 10 5 0 -50 1000 Vcc = 5.25V, Rbe = 47K, Vth = 1.5V 47K tpLH 10K tpLH 2.2K tpLH 2.2K tpHL 100 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 ILH100 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Vbe - Base Emitter Voltage - V 5-5 Figure 24. Switching time waveform and test schematic-- saturated test condition IF Figure 27. Propagation delay versus collector load and base-emitter resistance for IF=5 mA 1000 Propagation Delay - s 100 Ta = 25C IF = 5 mA Vcc = 5.25V Vth = 1.5V Base-emitter resistor Open(tpHL) Open(tpLH) 1M(tpHL) 1M(tpLH) 470K(tpHL) 10 470K(tpLH) 100K(tpHL) 100K(tpLH) VO t PHL t PLH VTH =1.5 V 1 100 1000 10000 100000 RL - Collector Load Resistor - VCC RL Figure 28. Propagation delay versus collector load and base-emitter resistance for IF=5 mA 20 Propagation Delay - s VO 15 10 5 RBE Ta = 25 C IF = 5 mA Vcc = 5.25V Vth = 1.5V Base-emitter resistor 82K(tpHL) 82K(tpLH) 47K(tpHL) 47K(tpLH) 33K(tpHL) 33K(tpLH) 22K(tpHL) Figure 25. Propagation delay versus temperature and collector load resistance for IF=10 mA 30 Propagation Delay - s 25 20 Vcc = 5.25, Rbe = 47K Vth = 1.5V 47K tpLH 10K tpLH 0 100 22K(tpLH) 1000 10000 100000 RL RL - Collector Load Resistor - - Collector Load Resistor - 15 10 5 0 -50 2.2K tpHL 2.2K tpLH 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Figure 29. Propagation delay versus collector load and base-emitter resistance for IF=10 mA 10 00 Base-emi tter resistor Open (tpH L) Open (tpL H) 1 M(tpHL) 1 M(tpLH) 4 70K(tpHL) 4 70K(tpLH) Propagation Del ay - s T = 25C a IF = 10 mA Vcc = 5.25 V 10 0 Vth = 1 .5 V 10 Figure 26. Propagation delay versus temperature and collector load resistance for IF=20 mA 35 Propagation Delay - s 1 00K(tpH L) 1 00K(tpL H) 8 2K(tpHL ) 8 2K(tpLH ) 30 25 20 15 10 5 0 Vcc = 5.25V, Rbe = 47K Vth = 1.5 V 47K tpLH 10K tpHL 2.2K tpLH 1 1 00 1 000 10000 1000 00 RL - Colle ctor Load Resistor - Figure 30. Propagation delay versus collector load and base-emitter resistance for IF=10 mA 15 2.2K tpHL 10K tpLH 47K tpHL -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Propagation Delay - s 10 Ta = 25 C IF = 10 mA Vcc = 5.25 V Vth = 1.5 V Base-emitter resistor 47K(tpHL) 47K(tpLH) 33K(tpHL) 33K(tpLH) 22K(tpHL) 22K(tpLH) 5 15K(tpHL) 15K(tpHL) 10K(tpHL) 10K(tpLH) 0 100 1000 10000 100000 RL - Collector Load Resistor - ILH200 5-6 Figure 31. Propagation delay versus collector load and base-emitter resistance for IF=15 mA 1000 Propagation Delay - s 100 10 1 .1 100 1000 10000 100000 RL - Collector Load Resistor - Base-emitter resistor Open(tpLH) 1M(tpHL) 1M(tpLH) 470K(tpHL) 470K(tpLH) 100K(tpHL) 100K(tpLH) 82K(tpHL) 82K(tpLH) Figure 34. Propagation delay versus collector load and base-emitter resistance for IF=15 mA 1000 Propagation Delay - s Ta = 25C IF = 15 mA Vcc = 5.25 V Vth = 1.5 V Open(tpHL) 100 10 1 Ta = 25C IF = 20 mA Vcc = 5.25V Vth = 1.5 V Open(tpHL) Open(tpLH) 1M(tpHL) 1M(tpLH) 470K(tpHL) 470K(tpLH) 100K(tpHL) 100K(tpLH) 82K(tpHL) .1 100 82K(tpLH) 1000 10000 100000 RL - Collector Load Resistor - Figure 32. Propagation delay versus collector load and base-emitter resistance for IF=15 mA Base-emitter emitter Figure 35. Common mode transient rejection 25000 Ta = 25 C, Vcc = 5.0V IF(L) = 10 mA, RL = 1K 20000 IF(H) = 0 mA 15000 10000 5000 0 1000 1200 1400 1600 1800 2000 2200 Vcm - Common Mode Voltage - V CMR-H Rate of Common Mode Voltage Change - V/s 15 Propagation Delay - s 10 Ta = 25C IF = 15 mA Vcc = 5.25V Vth = 1.5 V 47K(tpHL) 47K(tpLH) 33K(tpHL) 33K(tpLH) 22K(tpHL) 22K(tpLH) 15K(tpHL) 15K(tpLH) 10K(tpHL) 10K(tpLH) 8.2K(tpHL) CMR-L 5 0 100 1000 10000 100000 RL - Collector Load Resistor - 8.2K(tpLH) Figure 33. Propagation delay versus collector load and base-emitter resistance for IF=15 mA 20 Propagation Delay - s 15 10 5 0 Ta = 25C IF = 20 mA Vcc = 5.25V Vth = 1.5 V 47K(tpHL) 47K(tpLH) 33K(tpHL) 33K(tpLH) 22K(tpHL) 22K(tpLH) 15K(tpHL) 15K(tpLH) 10K(tpHL) 10K(tpLH) 8.2K(tpHL) 8.2K(tpLH) 100 1000 10000 100000 RL - Collector Load Resistor - ILH100 5-7 |
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